Electric field instabilities in TlGaSe2 crystals

dc.contributor.authorSeyidov, MirHasan Yu.
dc.contributor.authorSuleymanov, Rauf A.
dc.contributor.authorSahin, Yasin
dc.date.accessioned2025-10-29T11:22:53Z
dc.date.issued2008
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractCurrent-Voltage (I-V) characteristics of T1GaSe(2) single crystals have been measured in the direction perpendicular to the layers plane in the temperature region of 80 K-300 K. Samples were placed between two micas and electrical contacts were placed on the surfaces of micas (so called contactless measurements). Applied electric field was varied from -1000 V/cm to +1000 V/cm. Current oscillations have been observed only in the temperature region, 145 K-190 K. It is shown that these oscillations are the result of low frequency (similar to 0.01 Hz) oscillations of current with time which are due to electric field instabilities occurring within the crystals. The model is discussed for such field instabilities based on the inhomogeneous crystalline structure of the investigated crystals. (C) 2008 Elsevier Masson SAS. All rights reserved.
dc.identifier.doi10.1016/j.solidstatesciences.2008.02.022
dc.identifier.endpage1670
dc.identifier.issn1293-2558
dc.identifier.issn1873-3085
dc.identifier.issue11
dc.identifier.scopus2-s2.0-55049127071
dc.identifier.scopusqualityQ1
dc.identifier.startpage1666
dc.identifier.urihttps://doi.org/10.1016/j.solidstatesciences.2008.02.022
dc.identifier.urihttps://hdl.handle.net/20.500.14854/9149
dc.identifier.volume10
dc.identifier.wosWOS:000261358300027
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofSolid State Sciences
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectFerroelectrics
dc.subjectSemiconductors
dc.subjectElectronic transport
dc.subjectRecombination and trapping
dc.titleElectric field instabilities in TlGaSe2 crystals
dc.typeArticle

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