Temperature-dependent polarity reversal in Au/TlGaSe2 Schottky junctions

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dc.contributor.authorSeyidov, MirHasan Yu.
dc.contributor.authorSuleymanov, Rauf A.
dc.contributor.authorBakis, Yakup
dc.date.accessioned2025-10-29T11:19:30Z
dc.date.issued2009
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractTemperature-dependent reversal of the rectifying polarity has been observed in Au/TlGaSe2 Schottky junctions. To explain the experimental findings the important role of the tunneling current was taken into account. Besides, it was found that the temperature range, where the rectifying polarity reversal is observed, coincides with the temperature interval where an electronic phase transition takes place in TlGaSe2 crystals. The interface permittivity is significantly changed as a result of phase transitions, thus changing the Schottky barrier's width and consequently the contributions of tunneling and usual thermally assisted transitions. Schottky barrier method becomes a powerful tool investigating phase transitions in semiconductors.
dc.description.sponsorshipScientific & Technological Research Council of Turkey (TUBITAK) [106T323]
dc.description.sponsorshipThe authors are indebted the Scientific & Technological Research Council of Turkey (TUBITAK) for support by Project. No. 106T323.
dc.identifier.doi10.1063/1.3082506
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue4
dc.identifier.orcid0000-0002-0395-8375
dc.identifier.scopus2-s2.0-61449169007
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.3082506
dc.identifier.urihttps://hdl.handle.net/20.500.14854/8191
dc.identifier.volume105
dc.identifier.wosWOS:000263803300045
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectgallium compounds
dc.subjectpermittivity
dc.subjectphase transformations
dc.subjectrectification
dc.subjectSchottky barriers
dc.subjectsemiconductor-metal boundaries
dc.subjectternary semiconductors
dc.titleTemperature-dependent polarity reversal in Au/TlGaSe2 Schottky junctions
dc.typeArticle

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