Magnetic properties of Ni-implanted ITO thin films

dc.contributor.authorAy, F.
dc.contributor.authorAktas, B.
dc.contributor.authorKhaibullin, R. I.
dc.contributor.authorNuzhdin, V. I.
dc.contributor.authorRameev, B. Z.
dc.date.accessioned2025-10-29T11:26:26Z
dc.date.issued2015
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractThe magnetic properties of Ni-implanted ITO thin films have been investigated by ferromagnetic resonance (FMR) technique and vibrating sample magnetometry (VSM) techniques. Commercially available ITO thin films on fused silica substrates have been implanted with different fluences of Ni+ ions with energy of 40 keV and ion current density of 8 mu A/cm(2) at room temperature. The samples with three doses of 0.5 x 10(17), 1.0 x 10(17) and 1.5 x 10(17) ions/cm(2) have been studied. Room temperature ferromagnetism has been observed in the nickel-implanted ITO samples with fluences of 1.0 x 10(17) and 1.5 x 10(17) ions/cm(2). The magnetic properties of the samples have been explained by the formation of Ni-nanoparticles in the implanted surface layer of the ITO films. Although the formation of a diluted magnetic oxide phase cannot be ruled out entirely, the analysis of our FMR and VSM data reveals that the metallic Ni nanoparticles, formed during high-dose implantation process, have major contribution to the magnetic properties of the Ni-implanted ITO thin films. The sizes of the Ni-nanoparticles have been calculated from the blocking temperatures obtained by the VSM measurements. The filling factor of the Ni ferromagnetic phase in the granular magnetic layer has also been estimated by the effective magnetization approach applied to the FMR results. (C) 2014 Elsevier B.V. All rights reserved.
dc.description.sponsorshipTUBITAK / RFBR joint project program [213M524 / 14-02-91374_CT-a]
dc.description.sponsorshipThe work was partially supported by the TUBITAK / RFBR joint project program, grant No. 213M524 / 14-02-91374_CT-a. The authors would like to thank Dr. N.Dogan and A.Nazim for their assistance in the VSM-PPMS and SEM/EDX measurements, correspondingly.
dc.identifier.doi10.1016/j.jmmm.2014.09.075
dc.identifier.endpage135
dc.identifier.issn0304-8853
dc.identifier.issn1873-4766
dc.identifier.orcid0000-0002-2335-6734
dc.identifier.orcid0000-0003-0828-8312
dc.identifier.scopus2-s2.0-84908299697
dc.identifier.scopusqualityQ2
dc.identifier.startpage129
dc.identifier.urihttps://doi.org/10.1016/j.jmmm.2014.09.075
dc.identifier.urihttps://hdl.handle.net/20.500.14854/10256
dc.identifier.volume375
dc.identifier.wosWOS:000344949800021
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofJournal of Magnetism and Magnetic Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectRoom-Temperature Ferromagnetism
dc.subjectIndium-Tin Oxide
dc.subjectDoped In2o3
dc.subjectSemiconductors
dc.titleMagnetic properties of Ni-implanted ITO thin films
dc.typeArticle

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