Manipulating the magnetic and transport properties by CuIr thickness in CoFeB/CuIr/IrMn multilayers

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Iop Publishing Ltd

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info:eu-repo/semantics/closedAccess

Özet

In this study, it was investigated how the magnetic and electrical properties of the exchange biased multilayers are affected by the Pt and CuIr spacer layer thicknesses. For this purpose, CoFeB/NM/IrMn sample stacks which can be used as magnetic field sensors based on the anisotropic magnetoresistance and planar Hall effect (PHE) were designed. The magnetic and electrical results showed an unexpected behavior to the variations in the spacer layer thickness when a CuIr spacer layer was used instead of a Pt spacer layer in terms of the properties of exchange bias, anisotropic magneto-resistance voltage and PHE voltage. This phenomenon is explained by the layer interdiffusion between CuIr and IrMn layers.

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anisotropic magnetoresistance, CoFeB, CuIr, IrMn, magnetic multilayers, planar Hall effect, spin hall angle

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Journal of Physics D-Applied Physics

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Cilt

55

Sayı

44

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Onay

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