Heterostructures of hexagonal boron nitride with other two-dimensional materials: synthesis, properties, and applications

Abstract

In recent years, exploring two-dimensional (2D) heterostructures, including semiconductor, insulator, and metal, has opened new possibilities in many fields. Hexagonal boron nitride (h-BN) with band gap of ~5–6eV has emerged as a promising 2D material on account of its noticeable features such as high specific surface area, high Young modulus, and perfect chemical durability. The fabrication of heterostructure is an influential strategy to modify characteristic properties of 2D components and to expand their application areas. Creating h-BN-based heterostructures with other 2D materials (e.g., carbon nitride, graphene, metals) ensures considerable advantages due to their own excellent properties and opens new perspectives in diverse areas such as catalysis, sensing, and adsorption. Herein, this research provides broad prospects and highlights for the latest approaches in the preparation and characteristics of h-BN-based heterostructures, particularly focused on their physical, optical, and electrical properties. © 2024 Elsevier B.V., All rights reserved.