The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode

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dc.contributor.authorAsimov, A.
dc.contributor.authorAhmetoglu, M.
dc.contributor.authorKirsoy, A.
dc.contributor.authorOzer, M.
dc.contributor.authorYasin, M.
dc.date.accessioned2025-10-29T11:12:52Z
dc.date.issued2016
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractWe investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height Phi(b0) values of the diode were found to be 3.40 and Phi(b0) = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.
dc.description.sponsorshipUludag University [HDP(F)-2013/25]
dc.description.sponsorshipThe authors would like to thank Uludag University for the, support of BAP (HDP(F)-2013/25).
dc.identifier.doi10.1166/jno.2016.1881
dc.identifier.endpage218
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue2
dc.identifier.orcid0009-0001-3902-5585
dc.identifier.scopus2-s2.0-84954447084
dc.identifier.scopusqualityN/A
dc.identifier.startpage214
dc.identifier.urihttps://doi.org/10.1166/jno.2016.1881
dc.identifier.urihttps://hdl.handle.net/20.500.14854/6485
dc.identifier.volume11
dc.identifier.wosWOS:000372669800015
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Scientific Publishers
dc.relation.ispartofJournal of Nanoelectronics and Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectSchottky Barrier Diode
dc.subjectConducting Polymers
dc.subjectIdeality Factor
dc.subjectP3HT
dc.subjectSeries Resistance
dc.titleThe Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode
dc.typeArticle

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