Current trends in planar Hall effect sensors: evolution, optimization, and applications

dc.contributor.authorElzwawy, Amir
dc.contributor.authorPiskin, Hasan
dc.contributor.authorAkdogan, Numan
dc.contributor.authorVolmer, Marius
dc.contributor.authorReiss, Gunter
dc.contributor.authorMarnitz, Luca
dc.contributor.authorMoskaltsova, Anastasiia
dc.date.accessioned2025-10-29T11:16:31Z
dc.date.issued2021
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractThe advantages of planar Hall effect (PHE) sensors-their thermal stability, very low detection limits, and high sensitivities-have supported a wide range of advanced applications such as nano-Tesla (nT) magnetometers, current sensing, or low magnetic moment detection in lab-on-a-chip devices. In this review we outline the background and implications of these PHE sensors, starting from fundamental physics through their technological evolution over the past few decades. Key parameters affecting the performance of these sensors, including noise from different sources, thermal stability, and magnetoresistance magnitudes are discussed. The progression of sensor geometries and junctions from disk, cross-to-bridge, ring, and ellipse configuration is also reviewed. The logical sequence of these structures from single magnetoresistive layers to bi-, tri-layers, and spin-valves is also covered. Research contributions to the development of these sensors are highlighted with a focus on microfluidics and flexible sensorics. This review serves as a comprehensive resource for scientists who wish to use PHE for fundamental research or to develop new applications and devices. The conclusions from this report will benefit the development, production, and performance evaluation of PHE-based devices and microfluidics, as well as set the stage for future advances.
dc.identifier.doi10.1088/1361-6463/abfbfb
dc.identifier.issn0022-3727
dc.identifier.issn1361-6463
dc.identifier.issue35
dc.identifier.orcid0000-0003-2206-1616
dc.identifier.orcid0000-0001-9927-4930
dc.identifier.orcid0000-0002-1160-9650
dc.identifier.orcid0000-0003-1622-9726
dc.identifier.orcid0000-0002-0624-647X
dc.identifier.orcid0000-0001-8469-5919
dc.identifier.scopus2-s2.0-85110349584
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1088/1361-6463/abfbfb
dc.identifier.urihttps://hdl.handle.net/20.500.14854/7633
dc.identifier.volume54
dc.identifier.wosWOS:000670421500001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofJournal of Physics D-Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectplanar Hall effect
dc.subjectsensors
dc.subjectpermalloy
dc.subjectmagnetoresistance
dc.subjectthin films
dc.subjectNiFe
dc.subjectIrMn
dc.titleCurrent trends in planar Hall effect sensors: evolution, optimization, and applications
dc.typeReview Article

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