Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe2 layered semiconductor

dc.contributor.authorSeyidov, MirHasan Yu.
dc.contributor.authorSuleymanov, Rauf A.
dc.contributor.authorSale, Yasin
dc.contributor.authorBalaban, Ertan
dc.date.accessioned2025-10-29T11:19:28Z
dc.date.issued2014
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractThe strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe2 semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process. (C) 2014 AIP Publishing LLC.
dc.identifier.doi10.1063/1.4903051
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue21
dc.identifier.orcid0000-0001-7904-6172
dc.identifier.orcid0000-0001-7982-0615
dc.identifier.scopus2-s2.0-84913553731
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/1.4903051
dc.identifier.urihttps://hdl.handle.net/20.500.14854/8161
dc.identifier.volume116
dc.identifier.wosWOS:000346007400013
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physics
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectStructural Phase-Transitions
dc.titleEnhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe2 layered semiconductor
dc.typeArticle

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