Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method

Abstract

Structural, morphological and optical properties of undoped and boron doped Indium Selenide (InSe)thin films grown on glass and layered Gallium Selenide (GaSe) single crystal substrates with SILAR methodhave been investigated by XRD, AFM and UV-Vis spectrophotometer techniques. XRD measurements showedthat the crystal structure of InSe thin films grown on glass substrates were hexagonal P61 ?-In2Se3 with latticeparameters a=7.1286 Å, c=19.382 Å and z=6 while the InSe thin films grew as hexagonal P63/mmc InSe withlattice parameters a=4.005 Å, c=16.640 Å and z=4 on GaSe single crystal substrates. The AFM images showedthat average particle sizes of undoped and boron doped InSe thin films were found to be varying between 26.5-60.2 nm and 30.9-101.5 nm grown on glass and GaSe single crystal substrates, respectively. The opticalabsorption spectra of undoped and boron doped InSe thin films grown on both glass and GaSe single crystalsubstrates showed absorption maxima around the 2.00 and 2.24 eV, respectively. The calculated Urbachenergies of the InSe thin films grown on glass substrates were found bigger than those of the InSe thin filmsgrown on GaSe single crystal substrates.