Some special dielectric characteristics of TlGaSe2 layered crystals

Abstract

TlGaSe2 layered crystals were characterized with dielectric spectroscopy measurements. We have studied the memory effect within soliton regime, time relaxation in annealing temperature, and the effect of different cooling rate on conductivity and dielectric constant. The effects connected with the annealing time and cooling rate processes may be explained the theory of DDW. The measurements were carried out in a narrow temperature region (95-135 K). The temperature dependence of dielectric constant measurements show that the crystal reveals a weak dielectric anomaly at 101 K. A well-defined ferroclectric behaviour of first order transition was observed. (C) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.