The effect of annealing on the junction profile of CoFeB/MgO tunnel junctions

Abstract

The tunnelling magnetoresistance of CoFeB/MgO tunnel junctions is exceptionally high, although the electrodes and the barrier are grown at room temperature in the amorphous state. For their functionality annealing steps up to high temperatures are required. We have analyzed in detail the changes in the chemical and magnetization profile upon annealing up to 360 degrees. The multilayers used for this study are similar to those which are used in magnetic tunnel junctions, however with five repeats. In particular, we have used hard non-resonant and soft resonant magnetic x-ray scattering in order to unravel any changes upon annealing. The multilayers exhibit superior structural quality, which hardly changes with annealing. Surprisingly, only little recrystallization of the CoFeB and the MgO layers can be discerned by x-ray diffraction. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483956]