Diode Polarization and Resistive Switching in Metal/TlGaSe2 Semiconductor/Metal Devices

Abstract

The influence of electric field and current flow on the current-voltage (I-V) characteristics of TlGaSe2 layered semiconductor was investigated by using a two-point probe measurement system. Threshold-type switching in I-V characteristics associated with current-controlled memory effect was observed in all investigated samples. Observed switching characteristic is close to the most experimentally realizable memristive systems. Experimental findings were analyzed by using a model of metal-insulator-semiconductor-insulator-metal (MISIM) structure having memristive behavior.