Photovoltaic currents and activity of structural defects in a ferroelectric-semiconductor TlInS2: La single crystal

Abstract

This paper reports on the results of the investigation of electrically active defects in the crystal structure in a layered ferroelectric-semiconductor TlInS2: La crystal by photoinduced current transient spectroscopy (PICTS). It has been found that there are states of the crystal that differ in the magnitude of the photoresponse varying within four orders of magnitude, which is interpreted in terms of the differences in states of the domain structure of the crystal. The specific features of the recording of thermal emission from defects in the presence of an additional contribution from the photovoltaic component of the response of the crystal to excitation with light have been discussed.