Bias field induced impedance relaxation of TlGaSe2 semiconducting layered crystal at room temperature

Abstract

Complex Impedance Spectroscopy has been employed for the study of absorption kinetics at TIGaSe2 layered crystal under Bias voltage at room temperature. Two relaxations mechanisms have been observed. The crystal has slow and fast relaxation mechanisms in low and high frequency region, respectively. The complex impedance spectra were fitted by the superposition of two Cole-Cole types of relaxations. The fast relaxation in the higher frequency region may be due to dipolar relaxation and the slow relaxation in the low frequency region may be due to Maxwell-Wagner type relaxation.