Parametric Resonance and Photogalvanic Currents in Layered TlGaSe2 Crystals

dc.contributor.authorOdrinskii, A. P.
dc.contributor.authorSeyidov, M-H. Yu.
dc.contributor.authorMammadov, T. G.
dc.contributor.authorAlieva, V. B.
dc.date.accessioned2025-10-29T11:13:28Z
dc.date.issued2017
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractThe results of the phenomenological study of the abnormal photoresponse kinetics in layered TlGaSe2 ferroelectric semiconductor have been discussed over the temperature range T of similar to 170-280 K corresponding to the paraelectric phase of crystal. Taking into account the alterations in the photoresponse kinetics temperature, the main mechanisms of anomalies caused by the spatial inhomogeneity of localized and nonlocalized charges in the bulk of the crystal have been assumed. The mechanism of parametric resonance is suggested to be favored by the photogalvanic currents in the crystal.
dc.identifier.doi10.1134/S1063783417030258
dc.identifier.endpage462
dc.identifier.issn1063-7834
dc.identifier.issn1090-6460
dc.identifier.issue3
dc.identifier.orcid0000-0002-0092-8402
dc.identifier.orcid0000-0003-2814-9168
dc.identifier.orcid0009-0007-9629-147X
dc.identifier.scopus2-s2.0-85016469943
dc.identifier.scopusqualityQ3
dc.identifier.startpage457
dc.identifier.urihttps://doi.org/10.1134/S1063783417030258
dc.identifier.urihttps://hdl.handle.net/20.500.14854/6751
dc.identifier.volume59
dc.identifier.wosWOS:000398097500006
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPleiades Publishing Inc
dc.relation.ispartofPhysics of the Solid State
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectPhase-Transitions
dc.subjectSpectroscopy
dc.subjectBehavior
dc.subjectDefects
dc.titleParametric Resonance and Photogalvanic Currents in Layered TlGaSe2 Crystals
dc.typeArticle

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