Photoelectric activity of defects in La-doped layered TlInS2 crystals

Abstract

Photoelectric relaxation spectroscopy (photoinduced current relaxation spectroscopy, PICTS) is used to study pure and La-doped single crystals of TlInS2. The characteristics of electrically active defects are determined including the capture cross section for charge carriers, the thermal activation energy, and the temperature interval within which the charge state of a defect varies. The pyroelectric properties of TlInS2: La are studied. The defect responsible for the anomalies in the pyrocurrent is identified. (C) 2014 AIP Publishing LLC.