Effect of deep native defects on ultrasound propagation in TlInS2 layered crystal

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dc.contributor.authorSeyidov, MirHasan Yu.
dc.contributor.authorSuleymanov, Rauf A.
dc.contributor.authorOdrinsky, Andrei P.
dc.contributor.authorKirbas, Cafer
dc.date.accessioned2025-10-29T11:23:48Z
dc.date.issued2016
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractWe have investigated p-type semiconductor-ferroelectric TlInS2 by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77-350 K for the detection of native deep defect levels in TlInS2. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS2 was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS2 was shown. (C) 2016 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.physb.2016.06.010
dc.identifier.endpage92
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.orcid0000-0003-2814-9168
dc.identifier.scopus2-s2.0-84975741799
dc.identifier.scopusqualityQ2
dc.identifier.startpage86
dc.identifier.urihttps://doi.org/10.1016/j.physb.2016.06.010
dc.identifier.urihttps://hdl.handle.net/20.500.14854/9638
dc.identifier.volume497
dc.identifier.wosWOS:000380411100016
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectFerroelectric semiconductors
dc.subjectPhoto-induced current transient spectroscopy
dc.subjectPulse-echo method
dc.subjectDeep level defects
dc.subjectVelocity of longitudinal and transverse ultrasonic waves
dc.titleEffect of deep native defects on ultrasound propagation in TlInS2 layered crystal
dc.typeArticle

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