Magnetic Properties of Manganese Doped TlInS2 Layered Semiconductor: Diamagnetic to Paramagnetic Transitions at Low Temperatures

Abstract

The magnetic properties of undoped and Mn - doped TlInS2 layered semiconductors with manganese ions impurity concentration 0.3 atomic percent have been investigated. Magnetization measurements were shown that TlInS2 sample found diamagnetic properties at all measured temperatures. Magnetic susceptibility data suggests that in the temperature region under study different magnetic phases can be distinguished in TlInS2 + 0.3% Mn samples. The magnetic transition from diamagnetic to paramagnetic state took place at around similar to 10 K, where magnetic susceptibility and TlInS2 + 0.3% Mn change the sign from negative to positive. It is concluded that mass paramagnetic susceptibility of TlInS2 + 0.3% Mn samples is a Curie type, i.e. inversely proportional to the temperature. For all the samples the diamagnetic susceptibility is nearly temperature - in dependent in the region between similar to 60 and 300 K. In addition, a weakly kink - like anomaly of magnetic susceptibility at low temperatures below similar to 60 K was revealed for all investigated samples. This kink - like anomaly is the Van Vleck polarization paramagnetic contribution in total magnetic susceptibility of all samples.