A comparative study for profiling ultrathin boron layers in Si
| dc.contributor.author | Basaran, E | |
| dc.contributor.author | Addemir, O | |
| dc.contributor.author | Aslan, MH | |
| dc.contributor.author | Parker, EHC | |
| dc.date.accessioned | 2025-10-29T11:34:18Z | |
| dc.date.issued | 2003 | |
| dc.department | Fakülteler, Temel Bilimler Fakültesi, Fizik Bölümü | |
| dc.description.abstract | The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | |
| dc.identifier.doi | 10.1002/crat.200310132 | |
| dc.identifier.endpage | 1041 | |
| dc.identifier.issn | 0232-1300 | |
| dc.identifier.issue | 12 | |
| dc.identifier.scopus | 2-s2.0-0348233409 | |
| dc.identifier.scopusquality | Q3 | |
| dc.identifier.startpage | 1037 | |
| dc.identifier.uri | https://doi.org/10.1002/crat.200310132 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14854/12828 | |
| dc.identifier.volume | 38 | |
| dc.identifier.wos | WOS:000187461100003 | |
| dc.identifier.wosquality | Q3 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Wiley-V C H Verlag Gmbh | |
| dc.relation.ispartof | Crystal Research and Technology | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_WOS_20251020 | |
| dc.subject | Si | |
| dc.subject | electrochemical C-V profiling | |
| dc.subject | molecular beam epitaxy | |
| dc.subject | spreading resistance | |
| dc.subject | secondary ion mass spectrometry | |
| dc.title | A comparative study for profiling ultrathin boron layers in Si | |
| dc.type | Article |
