Optical characterization of the silicon photodiodes for the establishment of national radiometric standards

Abstract

Optical properties of the silicon photodiodes are investigated in the visible spectral regime. Non-linearity measurement standard was established by using Hamamatsu S1337-11 type windowless silicon photodiode whose non-linearity value was found to be better than 6 x 10(-5) at photocurrent level of 10(-9) to 10(-4) A. Temperature effects on the spectral responsivity for S1337-11, S1337-1010BQ and S1227-1010BQ type photodiodes were analyzed between 20degreesC and 40degreesC at 488.1, 514.7 and 632.8 nm vacuum wavelengths. The spatial uniformities of the responsivity for three type photodiodes are performed with a laser beam having I mm diameter by using home made two-axis micro translation system. Results of the reflectance measurements for three elements of reflection-based trap detectors were compared with the predicted values obtained from Fresnel equations. (C) 2003 Elsevier Ltd. All rights reserved.