Layered semiconductor GeS: A metamaterial with extremely low refractive index

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dc.contributor.authorÖztürk, Abdurrahman
dc.contributor.authorSüleymanli, Rauf
dc.date.accessioned2025-10-29T12:08:11Z
dc.date.issued2016
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 -- Busan -- 118957
dc.description.abstractReflection and transmission optical spectra of layered semiconductor GeS are investigated. It is shown, that this semiconductor can be considered as natural metamaterial with extremely low, n=0.14, refractive index in wide spectral region, ?=0.8-1.0 ?m. © 2020 Elsevier B.V., All rights reserved.
dc.identifier.doi10.1109/CLEOPR.2015.7376330
dc.identifier.isbn9781467371094
dc.identifier.scopus2-s2.0-84964038678
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://doi.org/10.1109/CLEOPR.2015.7376330
dc.identifier.urihttps://hdl.handle.net/20.500.14854/14348
dc.identifier.volume4
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_Scopus_20251020
dc.subjecteffective refractive index
dc.subjectGeS
dc.subjectmetamaterial structure
dc.subjectperiodic layer
dc.subjectpropagation
dc.titleLayered semiconductor GeS: A metamaterial with extremely low refractive index
dc.typeConference Object

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