Charged Defects as an Origin of the Memory Effect in Incommensurate Phase of TlInS2 Ferroelectric-Semiconductors

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dc.contributor.authorSeyidov, MirHasan Yu.
dc.contributor.authorSuleymanov, Rauf A.
dc.contributor.authorMammadov, Tofig G.
dc.contributor.authorFedotov, Aleksandr K.
dc.contributor.authorBabayev, Sardar S.
dc.contributor.authorSharifov, Galib M.
dc.date.accessioned2025-10-29T11:13:04Z
dc.date.issued2011
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description17th International Conference on Ternary and Multinary Compounds -- SEP 28-30, 2010 -- Baku, AZERBAIJAN
dc.description.abstractThe effects of annealing within the incommensurate phase and doping with the lanthanum impurity on the dielectric function epsilon of the TlInS2 single crystals have been investigated. It is shown that illumination and application of external electric field transform the epsilon(T) dependences for both the annealed and doped samples in the same manner. The inference is made that the correlation between observed effects is conditioned by the internal electric fields induced either by activation (polarization) of native defects during the annealing procedure or after the doping the crystals with active La centers. (C) 2011 The Japan Society of Applied Physics
dc.description.sponsorshipHA Aliyev Fdn,Azerbaijan Minist Commun & Informat Technol,Azerbaijan Minist Educ,Azerbaijan Natl Acad Sci
dc.description.sponsorshipAzerbaijan National Academy of Sciences
dc.description.sponsorshipBelarusian Republican Foundation for Fundamental Research
dc.description.sponsorshipWe appreciate joint grant of Azerbaijan National Academy of Sciences and Belarusian Republican Foundation for Fundamental Research.
dc.identifier.doi10.1143/JJAP.50.05FD07
dc.identifier.issn0021-4922
dc.identifier.issn1347-4065
dc.identifier.issue5
dc.identifier.orcid0000-0001-9836-0618
dc.identifier.scopus2-s2.0-79957622842
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1143/JJAP.50.05FD07
dc.identifier.urihttps://hdl.handle.net/20.500.14854/6572
dc.identifier.volume50
dc.identifier.wosWOS:000290789000039
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofJapanese Journal of Applied Physics
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectTransitions
dc.titleCharged Defects as an Origin of the Memory Effect in Incommensurate Phase of TlInS2 Ferroelectric-Semiconductors
dc.typeConference Object

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