Anisotropic magnetoresistance and planar Hall effect in magnetoresistive NiFe/Pt thin film

Abstract

The magnetoresistive NiFe/Pt sensor was fabricated by using standard microlithography and sputter deposition techniques and then the magnetic and magnetotransport properties were investigated. The magnetic properties of the sample show that the easy axis of magnetization prefers a predefined direction along the Hall bar. Moreover, the sample has uniaxial magnetic anisotropy due to the growth-induced magnetic anisotropy. On the other hand, the Anisotropic magnetoresistance (AMR) and the Planar Hall effect (PHE) of the sample were investigated in detail between 0 degrees and 360 degrees. The angle-dependent AMR and PHE signals at the in-plane magnetic field of constant magnitude intersect at certain angles. At these angles, the presence of unusual peaks and valleys was observed. This is proof that AMR and PHE curves had strongly affected each other at certain angles.