Magnetic resonance and magnetization studies of Fe implanted TlInS2 and TlGaSe2 crystals

Abstract

In this article, the results of investigations of the structure and magnetization of iron implanted TlInS2 and TlGaSe2 layered ferroelectric-semiconductor crystals have been reported. SEM studies revealed that a high-fluency implantation with Fe ions brings to metal nanoparticle formation in the near-surface irradiated region of both samples. Ferromagnetic Resonance (FMR) investigations exhibited an out-of-plane uniaxial magnetic anisotropy of Fe-implanted surface layer of the crystals. A soft ferromagnetic state in the Fe-implanted surface layer of the crystals has been observed from the magnetization measurements in a wide temperature interval. An unexpected magnetization versus temperature behaviour has been revealed by field-cooled (FC) and zero-field-cooled (ZFC) magnetization measurements. It has been found that the temperature dependencies of the ZFC magnetization of both samples are dominated on FC-curve in the temperature region of similar to 145-393 Kand similar to 58-370 K for Fe-implanted TlGaSe2 and TlInS2, respectively. The observed phenomenon has been discussed taking into account various interaction mechanisms between magnetic nanoparticles, including attractive magnetic dipole-dipole interaction and repulsive electrostatic and interparticle exchange coupling interactions.