Photoelectric activity of structural defects of a single crystal of the ferroelectric-semiconductor TlInS2: La

Abstract

Photoinduced current transient spectroscopy has been used in studying deep-level defects of the ferroelectric-semiconductor TlInS2. The specific features of defect detection in the lanthanum-doped and undoped single crystals have been compared. The explanation of the decrease in the photoelectric activity of defects in the doped sample has been proposed.