Dielectric relaxation in ferroelectric TlInS2 layered crystals within metastable chaotic state

Abstract

The results of investigations low frequency dielectric relaxation in layered ferroelectric TlInS2 crystals are presented. The measurements were performed in the temperature range of 180-230 K and in the frequency range of 5 kHz-1 MHz. Two different relaxation processes were observed in mentioned temperature interval. The crystal has slow and fast relaxation mechanisms in low and high frequency region, respectively. The presence of two different relaxation mechanisms in TlInS, is discussed. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.