Preillumination - Induced change of electronic transport properties of TlGaSe2 semiconductor

Abstract

The effect of the preillumination on the dark and the photo-conductivity of the TlGaSe2 layered semiconductor is investigated within the temperature range of 80-300 K After the illumination predominantly at high temperatures, a substantial decrease in both dark and photo-conductivities was observed. Observed phenomena resemble the Staebler-Wronski effect, which is typical for the amorphous semiconductors. The main contribution of this work is to show that the TlGaSe2 single crystals with well apparent crystalline structure can demonstrate certain characteristics peculiar to amorphous semiconductors. (C) 2014 Elsevier Masson SAS. All rights reserved.