Preillumination - Induced change of electronic transport properties of TlGaSe2 semiconductor

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dc.contributor.authorSeyidov, MirHasan Yu.
dc.contributor.authorSuleymanov, Rauf A.
dc.contributor.authorBalaban, Ertan
dc.contributor.authorSale, Yasin
dc.date.accessioned2025-10-29T11:22:53Z
dc.date.issued2014
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractThe effect of the preillumination on the dark and the photo-conductivity of the TlGaSe2 layered semiconductor is investigated within the temperature range of 80-300 K After the illumination predominantly at high temperatures, a substantial decrease in both dark and photo-conductivities was observed. Observed phenomena resemble the Staebler-Wronski effect, which is typical for the amorphous semiconductors. The main contribution of this work is to show that the TlGaSe2 single crystals with well apparent crystalline structure can demonstrate certain characteristics peculiar to amorphous semiconductors. (C) 2014 Elsevier Masson SAS. All rights reserved.
dc.identifier.doi10.1016/j.solidstatesciences.2014.04.009
dc.identifier.endpage52
dc.identifier.issn1293-2558
dc.identifier.issn1873-3085
dc.identifier.orcid0000-0001-7982-0615
dc.identifier.orcid0000-0001-7904-6172
dc.identifier.scopus2-s2.0-84900433648
dc.identifier.scopusqualityQ1
dc.identifier.startpage49
dc.identifier.urihttps://doi.org/10.1016/j.solidstatesciences.2014.04.009
dc.identifier.urihttps://hdl.handle.net/20.500.14854/9144
dc.identifier.volume33
dc.identifier.wosWOS:000338623500009
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofSolid State Sciences
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectAmophous semiconductor
dc.subjectChalcogenide semiconductors
dc.subjectThe Staebler-Wronski effect
dc.subjectPhotoconductivity
dc.titlePreillumination - Induced change of electronic transport properties of TlGaSe2 semiconductor
dc.typeArticle

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