Effect of electric field on negative linear expansion of ferroelectric-semiconductor TlGaSe2
| dc.contributor.author | Seyidov, Mir Hasan Yu | |
| dc.contributor.author | Süleymanov, Rauf A. | |
| dc.contributor.author | Yakar, Emin | |
| dc.contributor.author | Abdullayev, N. A. | |
| dc.contributor.author | Mammadov, Tofig G. | |
| dc.date.accessioned | 2025-10-29T12:08:01Z | |
| dc.date.issued | 2009 | |
| dc.department | Fakülteler, Temel Bilimler Fakültesi, Fizik Bölümü | |
| dc.description.abstract | The effect of electric field on the thermal expansion of the TlGaSe <inf>2</inf> ferroelectric-semiconductor with a layer crystalline structure has been investigated. A strong transformation of negative linear expansion coefficient in the layer plane has been observed as a result of the applied electric field. It was concluded that internal electric fields created by local polarized states in the ferroelectric- semiconductor are responsible for a negative thermal expansion and its behavior under the electric field. Predominantly, the electrostriction effect is the driving mechanism of the lattice deformation of TlGaSe<inf>2</inf> crystals at low temperatures. © 2009 American Institute of Physics. © 2009 Elsevier B.V., All rights reserved. | |
| dc.identifier.doi | 10.1063/1.3223318 | |
| dc.identifier.isbn | 0883182955 | |
| dc.identifier.isbn | 0883184419 | |
| dc.identifier.isbn | 0883184133 | |
| dc.identifier.issn | 1089-7550 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.issue | 6 | |
| dc.identifier.scopus | 2-s2.0-70349634919 | |
| dc.identifier.scopusquality | Q1 | |
| dc.identifier.uri | https://doi.org/10.1063/1.3223318 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14854/14262 | |
| dc.identifier.volume | 106 | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.relation.ispartof | Journal of Applied Physics | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_Scopus_20251020 | |
| dc.subject | Applied electric field | |
| dc.subject | Crystalline structure | |
| dc.subject | Driving mechanism | |
| dc.subject | Electrostriction effects | |
| dc.subject | Internal electric fields | |
| dc.subject | Lattice deformation | |
| dc.subject | Layer planes | |
| dc.subject | Linear expansion coefficient | |
| dc.subject | Linear expansions | |
| dc.subject | Low temperatures | |
| dc.subject | Negative thermal expansion | |
| dc.subject | Polarized state | |
| dc.subject | Electric field measurement | |
| dc.subject | Electric fields | |
| dc.subject | Electrostriction | |
| dc.subject | Ferroelectricity | |
| dc.subject | Thermal stress | |
| dc.subject | Thermal expansion | |
| dc.title | Effect of electric field on negative linear expansion of ferroelectric-semiconductor TlGaSe2 | |
| dc.type | Article |








