Electrical properties of the layered single crystals TIGaSe2 and TIInS2
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Yayıncı
Wydawnictwo Sigma-N O T Sp Z O O
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In the doped crystals TIGaSe2 and TIInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 - 300 K, the phase transitions at the temperatures of 240 - 245 K and 105 - 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples.
Açıklama
Anahtar Kelimeler
layered crystals, phase transition, DC resistance, AC conductance
Kaynak
Przeglad Elektrotechniczny
WoS Q Değeri
Scopus Q Değeri
Cilt
88
Sayı
7A
