Electrical properties of the layered single crystals TIGaSe2 and TIInS2
| dc.contributor.author | Fedotov, Aleksander K. | |
| dc.contributor.author | Tarasik, Maria I. | |
| dc.contributor.author | Mammadov, Tofig G. | |
| dc.contributor.author | Svito, Ivan A. | |
| dc.contributor.author | Zhukowski, Pawel | |
| dc.contributor.author | Koltunowicz, Tomasz N. | |
| dc.contributor.author | Seyidov, MirHasan Yu | |
| dc.date.accessioned | 2025-10-29T11:37:41Z | |
| dc.date.issued | 2012 | |
| dc.department | Gebze Teknik Üniversitesi | |
| dc.description.abstract | In the doped crystals TIGaSe2 and TIInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 - 300 K, the phase transitions at the temperatures of 240 - 245 K and 105 - 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples. | |
| dc.description.sponsorship | Swedish Institute | |
| dc.description.sponsorship | Belarusian Fundamental Research Foundation [F09Az-006] | |
| dc.description.sponsorship | The work was partially supported by the VISBY Program of the Swedish Institute and Belarusian Fundamental Research Foundation by Contracts. No F09Az-006 | |
| dc.identifier.endpage | 304 | |
| dc.identifier.issn | 0033-2097 | |
| dc.identifier.issn | 2449-9544 | |
| dc.identifier.issue | 7A | |
| dc.identifier.orcid | 0000-0001-7480-4931 | |
| dc.identifier.orcid | 0000-0003-2816-2725 | |
| dc.identifier.startpage | 301 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14854/13959 | |
| dc.identifier.volume | 88 | |
| dc.identifier.wos | WOS:000306010100068 | |
| dc.identifier.wosquality | Q4 | |
| dc.indekslendigikaynak | Web of Science | |
| dc.language.iso | en | |
| dc.publisher | Wydawnictwo Sigma-N O T Sp Z O O | |
| dc.relation.ispartof | Przeglad Elektrotechniczny | |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_WOS_20251020 | |
| dc.subject | layered crystals | |
| dc.subject | phase transition | |
| dc.subject | DC resistance | |
| dc.subject | AC conductance | |
| dc.title | Electrical properties of the layered single crystals TIGaSe2 and TIInS2 | |
| dc.type | Article |








