Electrical properties of the layered single crystals TIGaSe2 and TIInS2

dc.contributor.authorFedotov, Aleksander K.
dc.contributor.authorTarasik, Maria I.
dc.contributor.authorMammadov, Tofig G.
dc.contributor.authorSvito, Ivan A.
dc.contributor.authorZhukowski, Pawel
dc.contributor.authorKoltunowicz, Tomasz N.
dc.contributor.authorSeyidov, MirHasan Yu
dc.date.accessioned2025-10-29T11:37:41Z
dc.date.issued2012
dc.departmentGebze Teknik Üniversitesi
dc.description.abstractIn the doped crystals TIGaSe2 and TIInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 - 300 K, the phase transitions at the temperatures of 240 - 245 K and 105 - 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples.
dc.description.sponsorshipSwedish Institute
dc.description.sponsorshipBelarusian Fundamental Research Foundation [F09Az-006]
dc.description.sponsorshipThe work was partially supported by the VISBY Program of the Swedish Institute and Belarusian Fundamental Research Foundation by Contracts. No F09Az-006
dc.identifier.endpage304
dc.identifier.issn0033-2097
dc.identifier.issn2449-9544
dc.identifier.issue7A
dc.identifier.orcid0000-0001-7480-4931
dc.identifier.orcid0000-0003-2816-2725
dc.identifier.startpage301
dc.identifier.urihttps://hdl.handle.net/20.500.14854/13959
dc.identifier.volume88
dc.identifier.wosWOS:000306010100068
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherWydawnictwo Sigma-N O T Sp Z O O
dc.relation.ispartofPrzeglad Elektrotechniczny
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectlayered crystals
dc.subjectphase transition
dc.subjectDC resistance
dc.subjectAC conductance
dc.titleElectrical properties of the layered single crystals TIGaSe2 and TIInS2
dc.typeArticle

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