Electrical properties of the layered single crystals TlGaSe2 and TllnS2

Abstract

In the doped crystals TlGaSe<inf>2</inf> and TlInS<inf>2</inf>using method of temperature dependencies of DC resistance in the temperature range of 100 – 300 K, the phase transitions at the temperatures of 240 – 245 K and 105 – 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples. © 2018 Elsevier B.V., All rights reserved.