Electrical properties of the layered single crystals TlGaSe2 and TllnS2

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dc.contributor.authorFedotov, Aleksander K.
dc.contributor.authorTarasik, Mariya I.
dc.contributor.authorMammadov, Tofig G.
dc.contributor.authorSvito, Ivan A.
dc.contributor.authorZukowski, Pawel
dc.contributor.authorKoltunowicz, Tomasz N.
dc.contributor.authorSeyidov, Mir Hasan Yu
dc.date.accessioned2025-10-29T12:10:10Z
dc.date.issued2012
dc.departmentGebze Teknik Üniversitesi
dc.description.abstractIn the doped crystals TlGaSe<inf>2</inf> and TlInS<inf>2</inf>using method of temperature dependencies of DC resistance in the temperature range of 100 – 300 K, the phase transitions at the temperatures of 240 – 245 K and 105 – 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples. © 2018 Elsevier B.V., All rights reserved.
dc.identifier.endpage304
dc.identifier.issn0033-2097
dc.identifier.issn2449-9544
dc.identifier.issue7partA
dc.identifier.scopus2-s2.0-85033593127
dc.identifier.scopusqualityQ4
dc.identifier.startpage301
dc.identifier.urihttps://hdl.handle.net/20.500.14854/15003
dc.identifier.volume88
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSIGMA-NOT
dc.relation.ispartofPrzeglad Elektrotechniczny
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_Scopus_20251020
dc.subjectAC conductance
dc.subjectDC resistance
dc.subjectLayered crystals
dc.subjectPhase transition
dc.titleElectrical properties of the layered single crystals TlGaSe2 and TllnS2
dc.title.alternativeW?a?ciwo?ci elektryczne monokryszta?ów TlGaSe2 and TllnS2
dc.typeArticle

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