Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric-Semiconductor

Abstract

In this study the results of optical, electrical and photovoltaic experiments which were carried out to investigate the memory effect of TlGaSe2 ferroelectric - semiconductor with incommensurate (INC) - phase are presented. The aim is to show that electrical and open circuit photovoltage measurements can be effectively used for the study of memory effect of INC - structure in TlGaSe2.