Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric-Semiconductor

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dc.contributor.authorSeyidov, MirHasan Yu.
dc.contributor.authorSuleymanov, Rauf A.
dc.contributor.authorBalaban, Ertan
dc.contributor.authorSale, Yasin
dc.date.accessioned2025-10-29T11:19:19Z
dc.date.issued2015
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractIn this study the results of optical, electrical and photovoltaic experiments which were carried out to investigate the memory effect of TlGaSe2 ferroelectric - semiconductor with incommensurate (INC) - phase are presented. The aim is to show that electrical and open circuit photovoltage measurements can be effectively used for the study of memory effect of INC - structure in TlGaSe2.
dc.identifier.doi10.1080/00150193.2015.1049505
dc.identifier.endpage88
dc.identifier.issn0015-0193
dc.identifier.issn1563-5112
dc.identifier.issue1
dc.identifier.orcid0000-0001-7982-0615
dc.identifier.orcid0000-0001-7904-6172
dc.identifier.scopus2-s2.0-84940732941
dc.identifier.scopusqualityQ4
dc.identifier.startpage77
dc.identifier.urihttps://doi.org/10.1080/00150193.2015.1049505
dc.identifier.urihttps://hdl.handle.net/20.500.14854/8108
dc.identifier.volume481
dc.identifier.wosWOS:000360327600006
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor & Francis Ltd
dc.relation.ispartofFerroelectrics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20251020
dc.subjectDefect-Density Waves
dc.subjectIncommensurate Phases
dc.subjectCrystals
dc.titleManifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric-Semiconductor
dc.typeArticle

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