Design of a C Band High Efficiency Doherty Power Amplifier for 5G Applications

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Institute of Electrical and Electronics Engineers Inc.

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info:eu-repo/semantics/closedAccess

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In the context of emerging 5G technology, there has been a notable development of specific power amplifiers capable of operating at high frequencies. Among the various amplifier architectures utilized, the Doherty power amplifier (DPA) stands out as a prominent choice. Through the use of parallel Class-AB and Class-C amplifiers, the DPA achieves improved performance, especially during back-off operation condition. Specifically designed for digitally modulated signals with a high peak-to-average power ratio (PAPR), a feature relevant to 5G systems, this study presents a highly efficient symmetrical DPA. The DPA configuration comprises two GaN devices of equal size, designated for the principal Class-AB and ancillary Class-C amplifiers, respectively. According to simulation results, the designed DPA shows a saturated output power (P<inf>sat</inf>) of 25 W within the frequency range of 4.8-5.2 GHz, accompanied by a drain efficiency spanning from 58.8% to 61.2% at peak operation and 39% to 40.7% at a 6 dB back-off. © 2024 Elsevier B.V., All rights reserved.

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14th International Conference on Electrical and Electronics Engineering, ELECO 2023 -- Virtual, Bursa -- 197135

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5G mobile communication systems, C (programming language), Doherty amplifiers, Efficiency, Gallium nitride, Peak to average power ratio, Amplifier architecture, Backoffs, C-bands, Class-AB, Doherty power amplifier, High frequency HF, Higher efficiency, Parallel class, Performance, Specific power, III-V semiconductors

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