Design of a C Band High Efficiency Doherty Power Amplifier for 5G Applications
| dc.contributor.author | Coşkun, Onur | |
| dc.contributor.author | Afacan, Engin | |
| dc.date.accessioned | 2025-10-29T12:08:11Z | |
| dc.date.issued | 2023 | |
| dc.department | Fakülteler, Mühendislik Fakültesi, Elektronik Mühendisliği Bölümü | |
| dc.description | 14th International Conference on Electrical and Electronics Engineering, ELECO 2023 -- Virtual, Bursa -- 197135 | |
| dc.description.abstract | In the context of emerging 5G technology, there has been a notable development of specific power amplifiers capable of operating at high frequencies. Among the various amplifier architectures utilized, the Doherty power amplifier (DPA) stands out as a prominent choice. Through the use of parallel Class-AB and Class-C amplifiers, the DPA achieves improved performance, especially during back-off operation condition. Specifically designed for digitally modulated signals with a high peak-to-average power ratio (PAPR), a feature relevant to 5G systems, this study presents a highly efficient symmetrical DPA. The DPA configuration comprises two GaN devices of equal size, designated for the principal Class-AB and ancillary Class-C amplifiers, respectively. According to simulation results, the designed DPA shows a saturated output power (P<inf>sat</inf>) of 25 W within the frequency range of 4.8-5.2 GHz, accompanied by a drain efficiency spanning from 58.8% to 61.2% at peak operation and 39% to 40.7% at a 6 dB back-off. © 2024 Elsevier B.V., All rights reserved. | |
| dc.identifier.doi | 10.1109/ELECO60389.2023.10415970 | |
| dc.identifier.isbn | 9798350360493 | |
| dc.identifier.scopus | 2-s2.0-85185830637 | |
| dc.identifier.scopusquality | N/A | |
| dc.identifier.uri | https://doi.org/10.1109/ELECO60389.2023.10415970 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14854/14353 | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
| dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_Scopus_20251020 | |
| dc.subject | 5G mobile communication systems | |
| dc.subject | C (programming language) | |
| dc.subject | Doherty amplifiers | |
| dc.subject | Efficiency | |
| dc.subject | Gallium nitride | |
| dc.subject | Peak to average power ratio | |
| dc.subject | Amplifier architecture | |
| dc.subject | Backoffs | |
| dc.subject | C-bands | |
| dc.subject | Class-AB | |
| dc.subject | Doherty power amplifier | |
| dc.subject | High frequency HF | |
| dc.subject | Higher efficiency | |
| dc.subject | Parallel class | |
| dc.subject | Performance | |
| dc.subject | Specific power | |
| dc.subject | III-V semiconductors | |
| dc.title | Design of a C Band High Efficiency Doherty Power Amplifier for 5G Applications | |
| dc.type | Conference Object |








