Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

Abstract

The experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS<inf>2</inf> crystals selected from different technological batches and in TlInS<inf>2</inf>: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state. © 2009 Pleiades Publishing, Ltd. © 2009 Elsevier B.V., All rights reserved.