Unusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor

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dc.contributor.authorSeyidov, Mir Hasan Yu
dc.contributor.authorSüleymanov, Rauf A.
dc.contributor.authorSalehli, Ferid M.
dc.contributor.authorBabayev, Sardar S.
dc.contributor.authorMammadov, Tofig G.
dc.contributor.authorNajafov, A. I.
dc.contributor.authorSharifov, Galib M.
dc.date.accessioned2025-10-29T12:08:40Z
dc.date.issued2009
dc.departmentFakülteler, Temel Bilimler Fakültesi, Fizik Bölümü
dc.description.abstractThe experimental data on memory effects in an incommensurate phase are analyzed both in undoped layered TlInS<inf>2</inf> crystals selected from different technological batches and in TlInS<inf>2</inf>: La. Various types of unusual memory effect are detected. It is shown that the observed memory effects are due to pinning of the soliton superstructure by a defect density wave in the internal field of the electret state. © 2009 Pleiades Publishing, Ltd. © 2009 Elsevier B.V., All rights reserved.
dc.identifier.doi10.1134/S1063783409030226
dc.identifier.endpage576
dc.identifier.issn1063-7834
dc.identifier.issn1090-6460
dc.identifier.issue3
dc.identifier.scopus2-s2.0-62249083895
dc.identifier.scopusqualityQ3
dc.identifier.startpage568
dc.identifier.urihttps://doi.org/10.1134/S1063783409030226
dc.identifier.urihttps://hdl.handle.net/20.500.14854/14613
dc.identifier.volume51
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofPhysics of the Solid State
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_Scopus_20251020
dc.titleUnusual memory effects in an incommensurate phase of the TlInS2 ferroelectric semiconductor
dc.typeArticle

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