Yb impurity influence on parameters of PbTe crystals grown from the melt
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IEEE
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In the temperature range 77-300 K, electrophysical properties of PbTe:Yb monocrystals obtained by the Bridgmen method were studied. It was shown that Yb presence leads to improvement of structural characteristics and to the charge carrier concentration decrease down to similar to 10(14) cm(-3).
Açıklama
23rd International Semiconductor Conference (CAS 2000) -- OCT 10-14, 2000 -- SINAIA, ROMANIA
Anahtar Kelimeler
Kaynak
2000 International Semiconductor Conference, Vols 1 and 2, Cas 2000 Proceedings
