Yb impurity influence on parameters of PbTe crystals grown from the melt
| dc.contributor.author | Beshliu, V | |
| dc.contributor.author | Lungu, L | |
| dc.contributor.author | Nicorici, A | |
| dc.contributor.author | Nicorici, V | |
| dc.date.accessioned | 2025-10-29T11:36:37Z | |
| dc.date.issued | 2000 | |
| dc.department | Gebze Teknik Üniversitesi | |
| dc.description | 23rd International Semiconductor Conference (CAS 2000) -- OCT 10-14, 2000 -- SINAIA, ROMANIA | |
| dc.description.abstract | In the temperature range 77-300 K, electrophysical properties of PbTe:Yb monocrystals obtained by the Bridgmen method were studied. It was shown that Yb presence leads to improvement of structural characteristics and to the charge carrier concentration decrease down to similar to 10(14) cm(-3). | |
| dc.description.sponsorship | Natl Inst Res & Dev Microtechnologies,Romanian Acad Electrochem Soc Inc,IEEE, Electron Devices Soc,Natl Agcy Sci, Technol & Innovat,IEEE, Romania Sect,Electron Devices Chapter | |
| dc.identifier.endpage | 134 | |
| dc.identifier.isbn | 0-7803-5885-6 | |
| dc.identifier.issn | #DEĞER! | |
| dc.identifier.scopus | 2-s2.0-0034452688 | |
| dc.identifier.scopusquality | N/A | |
| dc.identifier.startpage | 131 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14854/13360 | |
| dc.identifier.wos | WOS:000168560900021 | |
| dc.identifier.wosquality | N/A | |
| dc.indekslendigikaynak | Web of Science | |
| dc.indekslendigikaynak | Scopus | |
| dc.language.iso | en | |
| dc.publisher | IEEE | |
| dc.relation.ispartof | 2000 International Semiconductor Conference, Vols 1 and 2, Cas 2000 Proceedings | |
| dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.snmz | KA_WOS_20251020 | |
| dc.title | Yb impurity influence on parameters of PbTe crystals grown from the melt | |
| dc.type | Conference Object |
